Volume 2, Issue 6-1, December 2014, Page: 34-38
A Flexible Research Reactor for Atomic Layer Deposition with a Sample-Transport Chamber for in Vacuo Analytics
Axel Sobottka , Leibniz-Institute of Surface Modification, Permoserstraße 15, 04318 Leipzig, Germany
Lutz Drößler , Leibniz-Institute of Surface Modification, Permoserstraße 15, 04318 Leipzig, Germany
C. Hossbach , Technische Universität Dresden, Institute of Semiconductors and Microsystems, Nöthnitzer Straße 64, 01187 Dresden, Germany
Bernd Abel , Leibniz-Institute of Surface Modification, Permoserstraße 15, 04318 Leipzig, Germany
Ulrike Helmstedt , Leibniz-Institute of Surface Modification, Permoserstraße 15, 04318 Leipzig, Germany
Received: Nov. 16, 2014;       Accepted: Nov. 19, 2014;       Published: Dec. 23, 2014
DOI: 10.11648/j.nano.s.2014020601.15      View  3160      Downloads  197
Abstract
A modular reactor for thermal atomic layer deposition (ALD) was designed, which allows changes of all reactor components in order to obtain a flexible set-up for research purpose. A sample transport chamber is included for dual purpose. It allows for in vacuo transport of samples to analytical devices such as an XPS instrument. Surface activation of the samples is possible in the same chamber via an irradiation-induced approach.
Keywords
Atomic Layer Deposition, Reactor Design, in Vacuo Sample Transport, UV Irradiation
To cite this article
Axel Sobottka , Lutz Drößler , C. Hossbach , Bernd Abel , Ulrike Helmstedt , A Flexible Research Reactor for Atomic Layer Deposition with a Sample-Transport Chamber for in Vacuo Analytics, American Journal of Nano Research and Applications. Special Issue:Advanced Functional Materials. Vol. 2, No. 6-1, 2014, pp. 34-38. doi: 10.11648/j.nano.s.2014020601.15
Reference
[1]
a) T. Kääriäinen, D. Cameron, M.-L. Kääriäninen, A. Sherman, “Atomic Layer Deposition: Principles, Characteristics, and Nanotechnology Applications,” John Wiley & Sons, Inc. Hoboken, New Jersey, 2013; b) R. W. Johnson, A. Hultqvist, S. F. Bent “A brief review of atomic layer deposition: from fundamentals to applications,” Materials Today, vol. 17, 2014, pp. 236-246; c) M. Leskelä, M. Ritala, “Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges,” Angew. Chem. Int. Ed., vol. 42, 2003, pp. 5548 – 5554; d) N. Pinna, M. Knez, “Atomic Layer Deposition of Nanostructured Materials,” Wiley VCH, Weinheim, 2011
[2]
L. Prager, U. Helmstedt, H. Herrnberger, O. Kahle, F. Kita, M. Münch, A. Pender, A. Prager, J.W. Gerlach, M. Stasiak, “Photochemical approach to high-barrier films for the encapsulation of flexible laminary electronic devices,” Thin Sol. Films, vol. 570, 2014, pp. 87-95
[3]
A. Singh, H. Klumbies, U. Schröder, L. Müller-Meskamp, M. Geidel, M. Knaut, C. Hoßbach, M. Albert, K. Leo and T. Mikolajick, “Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations,” Appl. Phys. Lett, vol. , 2013, 233302,
[4]
a) E. Langereis, M. Creatore, S.B.S. Heil, M.C.M. Van de Sanden,W.M.M. Kessels, „Plasmaassisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers,” Appl. Phys. Lett, vol. 89, 2006, 081915; b) T. Kääriäinen, D. Cameron, M.-L. Kääriäinen, A. Sherman, Atomic Layer Deposition — Principles, Characteristics, and Nanotechnology Applications,” John Wiley & Sons, and Scrivener Publishing, Hoboken (NJ) and Salem (Ma), 2013
[5]
J. W. Elam, M. D. Groner, and S. M. George, “Viscous Flow Reactor with Quartz Crystal Microbalance for Thin Film Growth by Atomic Layer Deposition,” Rev. Sci. Instr., vol. 73, 2002, pp. 2981-2987.
[6]
M. Geidel, M. Junige, M. Albert, J. W. Bartha, „In-situ Analysis on the initial Growth of ultra-thin Ruthenium Films with Atomic Layer Deposition,” Mircoelectr. Engin., vol. 107, 2013, pp. 151-155.
[7]
a) W. A. Kimes, E. F. Moore, J. E. Maslar, “Perpendicular-Flow, single-Wafer Atomic Layer Deposition Reactor Chamber Design for Use with in situ Diagnostics,” Rev. Sci. Instr., vol. 83, 2012, pp. 083106; b) J. Dendooven, K. Devloo-Casier, E. Levrau, R. Van Hove, S. P. Sree, M. R. Baklanov, J. A. Martens, C. Detavernier, “In Situ Monitoring of Atomic Layer Deposition in Nanoporous Thin Films Using Ellipsometric Porosimetry,” Langmuir, vol. 28, 2012, pp. 3852 - 3859
[8]
M. Ritala, M. Juppo, K. Kukli, A. Rahtu, M. Leskela, “In situ characterization of atomic layer deposition processes by a mass spectrometer,” J. Physique IV, vol. 9, 1999, pp. 1021 – 1028.
[9]
R. Methaapanon, S. M. Geyer, C. Hagglund, P. A. Pianetta, and S. F. Bent, “Portable Atomic Layer Deposition Reactor for in situ Synchrotron Photoemission Studies,” Rev. Sci. Instr., vol. 84, 2013, pp. 015104.
[10]
a) A.-A. D. Jones, A. D. Jones, “Numerical Simulation and Verification of Gas Transport during an Atomic Layer Deposition Process,” Mater. Sci. Semicond. Proc., vol. 21, 2014, pp. 82-90; b) D. Q. Pan, T. Li, T.C. Jen, C. Yuan, “Numerical Modelling of Carrier Gas Flow in Atomic Layer Deposition Vacuum Reactor: A comparative Study of Latice Boltzmann Models,” J. Vac. Sci. Tech. A, vol. 32, 2013, pp. 01A110; c) A.M. Lankhorst, B.D. Paarhuis, H.J.C.M. Terhorst, P.J.P.M. Simons, C.R. Klein, “Transient ALD Simulations for a multi-Wafer Reactor with trenched Wafers,” Surf. Coat. Tech., vol. 201, 2007, pp. 22-23.
[11]
To verify the reactor Al2O3 films were deposited with the instrument described above. AlMe3 (pur. ≥ 98 %) was used as obtained from Strem Chemicals Inc., Millipore ® grade water was degassed before filling of the precursor containers. Containers were kept at room temperature during deposition. Nitrogen was used as a carrier gas at a flow rate of 600 ml/min. Pulsing times were 1 s for the precursors and 4 s for purge gas. The deposition temperature was 200 °C. X-ray photoelectron spectra (XPS) were measured using an AXIS ULTRA Probe instrument from KRATOS Analytical Ltd., Manchester, UK, equipped with a monochromatic Al Kα X-ray source (15 kV, 10 mA) and a magnetic immersion lens. Depth profiles were determined by alternating XPS measurements and stepwise depth sputtering with an Ar+ beam (1 kV, area 2 2 mm2).
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