We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulator-semiconductor structures produced by irradiation with X-rays. The purpose of this article is to develop a model which most fully describes the phenomena occurring under the ionizing irradiation of MOS structures. For this, in addition to known processes, such as a generation of the electron-hole pairs in the dielectric volume, diffusion and drift in the electric field of mobile charge carriers (electrons and holes), capture holes at the traps and recombination of electrons with the trapped holes, we also took into account the formation of surface states. The mathematical model considered includes the continuity equations for free electrons and holes, the Poisson equation, the equation describing the kinetics of hole-charge accumulation at trap levels, and the equation describing the tunneling mechanism of discharge of the charge accumulated in the dielectric. The model developed makes it possible to simulate the processes of charge degradation of silicon structures by the effect of ionizing radiation, and to determine the change in the threshold voltage of the MIS structure under irradiation, the distribution of free and trapped charges in the dielectric, and the distribution of the electric field strength. The type of dose dependence of the change in the threshold voltage of the MIS structure is determined by a number of parameters: the concentration of the traps in the oxide, their distribution over the oxide thickness, the mobility and capture cross sections for electrons and holes, the nature of dependence of these parameters on the electric field in the oxide. The system of equations is solved iteratively by efficient numerical method. The obtained simulation results are in good agreement with the corresponding data presented in other scientific publications.
Published in | American Journal of Nano Research and Applications (Volume 5, Issue 1) |
DOI | 10.11648/j.nano.20170501.12 |
Page(s) | 7-11 |
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Copyright © The Author(s), 2017. Published by Science Publishing Group |
Ionizing Irradiation, Space Charge, Surface States, Numerical Simulation, MIS
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APA Style
Galina Zayats, Alexandr Komarov, Fadei Komarov, Sergei Miskiewicz. (2017). Modeling of Radiation Effects in the MIS Devices. American Journal of Nano Research and Applications, 5(1), 7-11. https://doi.org/10.11648/j.nano.20170501.12
ACS Style
Galina Zayats; Alexandr Komarov; Fadei Komarov; Sergei Miskiewicz. Modeling of Radiation Effects in the MIS Devices. Am. J. Nano Res. Appl. 2017, 5(1), 7-11. doi: 10.11648/j.nano.20170501.12
AMA Style
Galina Zayats, Alexandr Komarov, Fadei Komarov, Sergei Miskiewicz. Modeling of Radiation Effects in the MIS Devices. Am J Nano Res Appl. 2017;5(1):7-11. doi: 10.11648/j.nano.20170501.12
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TY - JOUR T1 - Modeling of Radiation Effects in the MIS Devices AU - Galina Zayats AU - Alexandr Komarov AU - Fadei Komarov AU - Sergei Miskiewicz Y1 - 2017/04/19 PY - 2017 N1 - https://doi.org/10.11648/j.nano.20170501.12 DO - 10.11648/j.nano.20170501.12 T2 - American Journal of Nano Research and Applications JF - American Journal of Nano Research and Applications JO - American Journal of Nano Research and Applications SP - 7 EP - 11 PB - Science Publishing Group SN - 2575-3738 UR - https://doi.org/10.11648/j.nano.20170501.12 AB - We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulator-semiconductor structures produced by irradiation with X-rays. The purpose of this article is to develop a model which most fully describes the phenomena occurring under the ionizing irradiation of MOS structures. For this, in addition to known processes, such as a generation of the electron-hole pairs in the dielectric volume, diffusion and drift in the electric field of mobile charge carriers (electrons and holes), capture holes at the traps and recombination of electrons with the trapped holes, we also took into account the formation of surface states. The mathematical model considered includes the continuity equations for free electrons and holes, the Poisson equation, the equation describing the kinetics of hole-charge accumulation at trap levels, and the equation describing the tunneling mechanism of discharge of the charge accumulated in the dielectric. The model developed makes it possible to simulate the processes of charge degradation of silicon structures by the effect of ionizing radiation, and to determine the change in the threshold voltage of the MIS structure under irradiation, the distribution of free and trapped charges in the dielectric, and the distribution of the electric field strength. The type of dose dependence of the change in the threshold voltage of the MIS structure is determined by a number of parameters: the concentration of the traps in the oxide, their distribution over the oxide thickness, the mobility and capture cross sections for electrons and holes, the nature of dependence of these parameters on the electric field in the oxide. The system of equations is solved iteratively by efficient numerical method. The obtained simulation results are in good agreement with the corresponding data presented in other scientific publications. VL - 5 IS - 1 ER -