The Linewidth Broadening Factor: A Length-Scale-Dependent Analytical Approach
Abdessamad Benhsaien,
Zhenguo Lu,
Karin Hinzer,
Trevor James Hall
Issue:
Volume 5, Issue 1, February 2017
Pages:
1-6
Received:
28 February 2017
Accepted:
30 March 2017
Published:
17 April 2017
Abstract: A first-order frequency-dependent formula of the linewidth broadening factor (α–factor) is derived in terms of scattering rates whilst, a mesoscopic disk approach is used in order to accompany the dimension effect to the spontaneous emission lifetime (inverse of scattering rate). An excitonic correction to the relaxation properties is shown to occur provided the binding energy of the electron and hole is comparable to their eigenenergy-separation. The ensuing analysis is independent of the selected III-V material system and resides upon three simplifying assumptions which allow for analytical formulae to be derived.
Abstract: A first-order frequency-dependent formula of the linewidth broadening factor (α–factor) is derived in terms of scattering rates whilst, a mesoscopic disk approach is used in order to accompany the dimension effect to the spontaneous emission lifetime (inverse of scattering rate). An excitonic correction to the relaxation properties is shown to occu...
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Modeling of Radiation Effects in the MIS Devices
Galina Zayats,
Alexandr Komarov,
Fadei Komarov,
Sergei Miskiewicz
Issue:
Volume 5, Issue 1, February 2017
Pages:
7-11
Received:
9 March 2017
Accepted:
28 March 2017
Published:
19 April 2017
Abstract: We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulator-semiconductor structures produced by irradiation with X-rays. The purpose of this article is to develop a model which most fully describes the phenomena occurring under the ionizing irradiation of MOS structures. For this, in addition to known processes, such as a generation of the electron-hole pairs in the dielectric volume, diffusion and drift in the electric field of mobile charge carriers (electrons and holes), capture holes at the traps and recombination of electrons with the trapped holes, we also took into account the formation of surface states. The mathematical model considered includes the continuity equations for free electrons and holes, the Poisson equation, the equation describing the kinetics of hole-charge accumulation at trap levels, and the equation describing the tunneling mechanism of discharge of the charge accumulated in the dielectric. The model developed makes it possible to simulate the processes of charge degradation of silicon structures by the effect of ionizing radiation, and to determine the change in the threshold voltage of the MIS structure under irradiation, the distribution of free and trapped charges in the dielectric, and the distribution of the electric field strength. The type of dose dependence of the change in the threshold voltage of the MIS structure is determined by a number of parameters: the concentration of the traps in the oxide, their distribution over the oxide thickness, the mobility and capture cross sections for electrons and holes, the nature of dependence of these parameters on the electric field in the oxide. The system of equations is solved iteratively by efficient numerical method. The obtained simulation results are in good agreement with the corresponding data presented in other scientific publications.
Abstract: We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulator-semiconductor structures produced by irradiation with X-rays. The purpose of this article is to develop a model which most fully describes the phenomena occurring under the ionizing irradiation of MOS structures. For this, in addition to kno...
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